1994. 6. 15
1/1
SEMICONDUCTOR
TECHNICAL DATA
KTA1279
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 0
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
-300
V
Collector-Emitter Voltage
V
CEO
-300
V
Emitter-Base Voltage
V
EBO
-5.0
V
Collector Current
I
C
-500
mA
Emitter Current
I
E
500
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature
T
stg
-55 150
Note :* Pulse test : PW 300 S, Duty Cycle 2%
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
V
(BR)CBO
I
C
=-100 A, I
E
=0
-300
-
-
A
Emitter Cut-off Current
V
(BR)CEO
I
C
=-1.0mA, I
B
=0
-300
-
-
A
DC Current Gain
h
FE
*
I
C
=-1.0mA, V
CE
=-10V
25
-
-
I
C
=-10mA, V
CE
=-10V
40
-
-
I
C
=-30mA, V
CE
=-10V
25
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
*
I
C
=-20mA, I
B
=-2.0mA
-
-
-0.5
V
Base-Emitter Saturation Voltage
V
BE(sat)
*
I
C
=-20mA, I
B
=-2.0mA
-
-
-0.9
V
Transition Frequency
f
T
V
CE
=-20V, I
C
=-10mA, f=100MHz
50
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=-20V, I
E
=0, f=1MHz
-
-
6.0
V
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